posted on 2011-07-22, 12:29authored byKhalil Arshak, Miroslav Mihov, Arousian Arshak, Declan McDonagh, Michael J. Pomeroy
The positive resist image by dry etching (PRIME)
process is a high resolution lithography system
incorporating electron beam exposure, silylation and
dry development. The process steps in PRIME with
Shipley SPRSOSA resist have been modeled and
simulations of nanostructures (50m lines/spaces,
30nm single line) has been presented. The silylation
process step in PRIME with SPRS05A resist has been experinientally characterized using FT-IR
spectroscopy.
History
Publication
Nanotechnology 2001 Proceedings of the 1st IEEE Conference