Modelling and simulations of nanostructures for shipley SPR505A resist using PRIME Process
conference contribution
posted on 2011-07-22, 12:29 authored by Khalil Arshak, Miroslav Mihov, Arousian Arshak, Declan McDonagh, Michael J. PomeroyThe positive resist image by dry etching (PRIME)
process is a high resolution lithography system
incorporating electron beam exposure, silylation and
dry development. The process steps in PRIME with
Shipley SPRSOSA resist have been modeled and
simulations of nanostructures (50m lines/spaces,
30nm single line) has been presented. The silylation
process step in PRIME with SPRS05A resist has been experinientally characterized using FT-IR
spectroscopy.
History
Publication
Nanotechnology 2001 Proceedings of the 1st IEEE ConferencePublisher
IEEE Computer SocietyNote
peer-reviewedRights
©2001 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.Language
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