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Patterning nanometer resist features on planar & topography substrates using the 2-step NERIME FIB top surface imaging process
conference contribution
posted on 2011-07-20, 12:40 authored by Khalil Arshak, Stephen L. Gilmartin, Arousian Arshak, Damien Collins, Olga KorostynskaThe 2-step negative resist image by dry etching
(2-step NERIME) focused ion beam (FIB) top surface imaging (TSI) process has been previously reported
as an excellent technique for patterning nanometer
scale features in DNQ/novolak based photoresists on
silicon substrates. In this paper we demonstrate that
the 2-step NERIME process can be used to pattern
nanometer scale resist features on different substrate
materials and topography substrates.
History
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ICMENS’05 Proceedings of the 2005 International Conference on MEMS, NANO and Smart SystemsPublisher
IEEE Computer SocietyNote
peer-reviewedRights
©2005 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.Language
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