Arshak Radiation induced changes.pdf (593.45 kB)
Radiation-induced changes in the electrical properties of TiO2 thick films
conference contributionposted on 2022-10-05, 11:18 authored by KHALIL ARSHAK, Olga Korostynska, Arousian Arshak, Deirdre Morris
The electrical properties of screen-printed TiO2 based thick films were explored in terms of gamma radiation influence. Screen-printed pn-heterojunctions and resistors were exposed to γ- radiation from a 137Cs source with an activity of 370 kBq. To form the resistors, a doping of TiO2 paste with 2 wt.% of Carbon was implemented to improve their conductivity. All samples showed an increase in the values of current with increasing radiation dose. The diode-type structures sustained a dose of 513 μSv, with considerable increase in leakage current values. Counterpart resistor-type structures experienced a three-order of magnitude increase in the values of current after irradiation with a dose of 7.524 mSv. Furthermore, S-type switching, followed by a forming effect were monitored at this stage, clearly attributed to the influence of gamma radiation.
PublisherIEEE Computer Society
Rights©2002 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Department or School
- Electronic & Computer Engineering