Top surface imaging lithography processes for I-line resists using liquid-phase silylation
conference contribution
posted on 2022-11-24, 15:14 authored by Khalil Arshak, Arousian Arshak, Miroslav Mihov, Declan McDonaghIn this paper, liquid-phase silylation process for
Top Surface Imaging Lithography systems incorporated e-beam exposure has been experimentally investigated using FT-IR
spectroscopy, UV spectroscopy, SIM spectrometry and SEM cross-sectionals. The impact of different silylating agents on Shipley SPR505A resist system is presented for both the UV exposed and e-beam crosslinked regions of the resist. Results
show that an e-beam dose of 50μC/cm2 at 30KeV is sufficient to crosslink the resist and prevent silylation. The silylation contrast using HMCTS was found to be the highest (11:1) in comparison
with other two agents. It was found that the silicon incorporation in SPR505A resist follows Case II diffusion mechanisms.
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Proceedings 23rd International Conference on Microelectronics (MIEL 2002),Publisher
IEEE Computer SocietyNote
peer-reviewedRights
©2008 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.Language
EnglishExternal identifier
Department or School
- Physics
- Electronic & Computer Engineering
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