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Solvent vapor growth of axial heterostructure nanowires with multiple alternating segments of silicon and germanium

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journal contribution
posted on 2016-08-26, 08:44 authored by Grace Flynn, Quentin M. Ramasse, KEVIN M. RYANKEVIN M. RYAN
Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors into the vapor phase of an organic solvent in which a tin-coated stainless steel substrate is placed. The Si-Ge transition is obtained by sequential injection with the more difficult Ge-Si transition enabled by inclusion of a quench sequence in the reaction. This approach allows for alternating between pure Si and pure Ge segments along the entire nanowire length with good control of the respective segment dimensions. The multisegment heterostructure nanowires presented are Ge Si, Si Ge Si, Ge-Si-Ge, Si-Ge-Si-Ge, and Si-Ge-Si-Ge-Si-Ge. The interfacial abruptness of the Ge to Si interface is also determined through the use of aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy.

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Publication

Nano Letters;16, pp. 374-380

Publisher

American Chemical Society

Note

peer-reviewed Supporting information for this article can be found on second file.

Other Funding information

SFI, Intel (Ireland) Ltd, IRC

Rights

"© ACM, 2016. This is the author's version of the work. It is posted here by permission of ACM for your personal use. Not for redistribution. The definitive version was published in Nano Letters, 16, pp. 374-380, http://dx.doi.org/10.1021/acs.nanolett.5b03950

Language

English

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