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Wideband semiconductor optical amplifier steady-state numerical model

Date
2001
Abstract
A wideband steady-state model and efficient numerical algorithm for a bulk InP–InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier is described. The model is applicable over a wide range of operating regimes. The relationship between spontaneous emission and material gain is clarified. Simulations and comparisons with experiment are given which demonstrate the versatility of the model.
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Description
peer-reviewed
Publisher
Citation
IEEE Journal of Quantum Electronics;37/ 3/ pp. 439-447
Collections
Electronic & Computer Engineering
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Connelly_Wideband.pdf
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Keywords
modeling, semiconductor optical amplifier
ULRR Identifiers
https://hdl.handle.net/10344/1196
 https://doi.org/10.34961/4060
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Funding Information
Sustainable Development Goals
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