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Modelling and simulations of nanostructures for shipley SPR505A resist using PRIME Process

Date
2001
Abstract
The positive resist image by dry etching (PRIME) process is a high resolution lithography system incorporating electron beam exposure, silylation and dry development. The process steps in PRIME with Shipley SPRSOSA resist have been modeled and simulations of nanostructures (50m lines/spaces, 30nm single line) has been presented. The silylation process step in PRIME with SPRS05A resist has been experinientally characterized using FT-IR spectroscopy.
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Description
peer-reviewed
Publisher
IEEE Computer Society
Citation
Nanotechnology 2001 Proceedings of the 1st IEEE Conference
Collections
Electronic & Computer Engineering
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Arshak%20Modelling%20and%20nanostructures.pdf
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Keywords
positive resist image by dry etching
ULRR Identifiers
https://hdl.handle.net/10344/1186
 https://doi.org/10.34961/4096
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Funding Information
Sustainable Development Goals
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