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Modelling of resolution enhancement processes in lithography
Date
1995
Abstract
This paper describes the modelling and simulation of two resolution enhancement techniques in lithography ; 1) phase shift mask (PSM) technology and 2) top surface imaging (TSI) with silylation and dry development. The effect of the duty ratio on the image contrast is computed. Simulated one and two dimensional rim shifters and attenuated PSMs are presented. The effect of the aerial image on the silylation profile for the top imaging processes, DESIRE and PRIME, is also presented. The effect of the first etch step on the final resist profiles is examined. The partial pressure and the presence of magnetic fields are also presented.
Supervisor
Description
peer-reviewed
Publisher
IEEE Computer Society
Citation
MIEL- 20th International Conference on Microelectronics