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All-optical AND gate with improved extinction ratio using signal induced nonlinearities in a bulk semiconductor optical amplifier

Date
2006
Abstract
An all-optical AND gate based on optically induced nonlinear polarization rotation of a probe light in a bulk semiconductor optical amplifier is realized at a bit rate of 2.5Gbit/s. By operating the AND gate in an up and inverted wavelength conversion scheme, the extinction ratio is improved by 8dB compared with previously published work.
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Description
peer-reviewed
Publisher
Optical Society of America
Citation
Optics Express;14/ 7/ pp. 2938-2943
Collections
Electronic & Computer Engineering
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Connelly_all_optical.pdf
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Keywords
optical logic, semiconductor optical amplifiers
ULRR Identifiers
https://hdl.handle.net/10344/1111
 https://doi.org/10.34961/3510
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Funding Information
Sustainable Development Goals
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