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Focused ion beam lithography- overview and new approaches
Date
2004
Abstract
Focused Ion Beam (FIB) lithography has significant advantages over the electron beam counterpart in terms of resist sensitivity, backscattering and proximity effects. Applying the Top Surface Imaging (TSI) principal to FIB lithography could further enhance its capability. In this paper we review different FIB lithography processes which utilise both wet and dry development. As of further development of this technology, we report a novel lithography process which combines focused Cia' ion beam (Cia' FIB) exposure, silylation and oxygen dry etching. The Negative Resist Image by D q Etching (NERIME) is a TSI scheme for DNQhovolak based ICS~SIS and can result in either positive or negative resist images depending on the extent of the ion beam exposure dose. The NERlMF process can resolve nanometer resist patterns as small as 30nm yet maintaining high aspect ratio of up to 15. The proposed lithography scheme could be utilised for advanced prototype IC's fabrication and critical CMOS lithography process steps.
Supervisor
Description
peer-reviewed
Publisher
IEEE Computer Society
Citation
Microelectronics 2004 International Conference; (2), pp. 459-462