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Patterning nanometer resist features on planar & topography substrates using the 2-step NERIME FIB top surface imaging process
Date
2005
Abstract
The 2-step negative resist image by dry etching (2-step NERIME) focused ion beam (FIB) top surface imaging (TSI) process has been previously reported as an excellent technique for patterning nanometer scale features in DNQ/novolak based photoresists on silicon substrates. In this paper we demonstrate that the 2-step NERIME process can be used to pattern nanometer scale resist features on different substrate materials and topography substrates.
Supervisor
Description
peer-reviewed
Publisher
IEEE Computer Society
Citation
ICMENS’05 Proceedings of the 2005 International Conference on MEMS, NANO and Smart Systems
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Files
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Ardshak%20Patterning.pdf
Adobe PDF, 1.15 MB