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Inverted all-inorganic nanorod-based light-emitting diodes via electrophoretic deposition
Date
2024
Abstract
High performance and high stability in all-inorganic solution processed nanocrystal-based light-emitting diodes (LEDs) are highly attractive for large area devices compared to organic material-based LEDs. In this work, an inverted all-inorganic LED structure is designed to have an easy integration with thin-film transistors. Adopting robust inorganic materials such as Ni1−xO nanoparticle films as a hole transport layer (HTL) is beneficial for the performance of LED. Herein, we have optimized the HTL by introducing Mg into Ni1−xO to bridge the difference in energy offset between the nanorod emissive layer and the HTL, in addition to the advantages of low temperature solubility of Ni1−xO:Mg nanoparticles. Furthermore, CdSe/CdS-based nanorods via electrophoretic deposition (EPD) are amassed in a vertically aligned (VANR) fashion as an emissive layer to facilitate the carrier transportation. Fostering these approaches enabled an EQE of 1.2% of the fabricated device, establishing the viability for further development of efficient and highly stable nanocrystal-based LEDs.
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Publisher
Americal Chemical Society
Citation
ACS Applied Nano Materials, 2024
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Zhang_2024_Inverted.pdf
Adobe PDF, 5.97 MB
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Funding Information
This work was supported by the Science Foundation Ireland (SFI) career development award (SFI 17/CDA/4733), SFI 12/RC/2276_P2, SFI 18/EPSRC-CDT/3585, the Engineering and Physical Sciences Research Council EP/S023321/1, Irish Research Council (IRC) (Grant No. IRCLA/2017/285) and Shenzhen Key Laboratory for Deep Subwavelength Scale Photonics (ZDSYS20220527171201003)
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Type
Article
Rights
https://creativecommons.org/licenses/by-nc-sa/4.0/