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Growth of crystalline copper silicide nanowires in high yield within a high boiling point solvent system

Date
2012
Abstract
Here, we report the formation of high density arrays of Cu15Si4 nanowires using a high boiling point organic solvent based method. The reactions were carried out using Cu foil substrates as the Cu source with nanowire growth dependent upon the prior formation of Cu15Si4 crystallites on the surface. The method shows that simple Si delivery to metal foil can be used to grow high densities of suicide nanowires with a tight diameter spread at reaction temperatures of 460 degrees C. The nanowires were characterized by high-resolution transmission electron microscopy (HRTEM), high-resolution scanning electron microscopy (HRSEM), and X-ray photoelectron spectroscopy (XPS), and electrical analysis showed that they possess low resistivities.
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Description
peer-reviewed
Publisher
American Chemical Society
Citation
Chemistry of Materials;24 (22), pp. 4319-4325
Collections
Bernal Institute
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Ryan_2012_Growth.pdf
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Keywords
silicide nanowires, copper, high boiling point solvent synthesis, SI
ULRR Identifiers
https://researchrepository.ul.ie/handle/10344/7379
 https://doi.org/10.34961/4681
Funding code
Funding Information
Science Foundation Ireland (SFI), Irish Governmentâ s Programme for Research in Third Level Institutions, Cycle 4, Irish Research Council (IRC)
Sustainable Development Goals
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Type
Article
Rights
https://creativecommons.org/licenses/by-nc-sa/1.0/
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