Loading...
Top surface imaging lithography processes for I-line resists using liquid-phase silylation
Date
2002
Abstract
In this paper, liquid-phase silylation process for Top Surface Imaging Lithography systems incorporated e-beam exposure has been experimentally investigated using FT-IR spectroscopy, UV spectroscopy, SIM spectrometry and SEM cross-sectionals. The impact of different silylating agents on Shipley SPR505A resist system is presented for both the UV exposed and e-beam crosslinked regions of the resist. Results show that an e-beam dose of 50μC/cm2 at 30KeV is sufficient to crosslink the resist and prevent silylation. The silylation contrast using HMCTS was found to be the highest (11:1) in comparison with other two agents. It was found that the silicon incorporation in SPR505A resist follows Case II diffusion mechanisms.
Supervisor
Description
peer-reviewed
Publisher
IEEE Computer Society
Citation
Proceedings 23rd International Conference on Microelectronics (MIEL 2002),