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Blowing of polycrystalline silicon fuses

Date
2010
Abstract
Polycrystalline silicon fuses are one time programmable memory elements which allow the calibration of integrated circuits at wafer and package level. We present a zero-dimensional lumped parameter model of the programming of fuses made from a combination of tungsten silicide and polycrystalline silicon. The components of the model are an electrical model, a thermal model, and a flow model. The model generates quantitatively accurate results and reproduces trends with applied voltage and fuse size. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457469]
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Description
peer-reviewed
Publisher
American Institute of Physics
Citation
Applied Physics;97, 023502
Collections
Mathematics & Statistics
MACSI - Mathematics Application Consortium for Science & Industry
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Fowler_2011_blowing.pdf
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Keywords
charge injection, diffraction, electrodes, gold, organic semiconductors, point contacts, thin film transistors
ULRR Identifiers
https://researchrepository.ul.ie/handle/10344/5034
 https://doi.org/10.34961/4167
Funding code
Funding Information
Science Foundation Ireland (SFI)
Sustainable Development Goals
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Type
Article
Rights
https://creativecommons.org/licenses/by-nc-sa/1.0/
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