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Blowing of polycrystalline silicon fuses

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Date
2010
Abstract
Polycrystalline silicon fuses are one time programmable memory elements which allow the calibration of integrated circuits at wafer and package level. We present a zero-dimensional lumped parameter model of the programming of fuses made from a combination of tungsten silicide and polycrystalline silicon. The components of the model are an electrical model, a thermal model, and a flow model. The model generates quantitatively accurate results and reproduces trends with applied voltage and fuse size. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457469]
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Description
peer-reviewed
Publisher
American Institute of Physics
Citation
Applied Physics;97, 023502
Collections
Mathematics & Statistics
MACSI - Mathematics Application Consortium for Science & Industry
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Fowler_2011_blowing.pdf
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Keywords
charge injection, diffraction, electrodes, gold, organic semiconductors, point contacts, thin film transistors
ULRR Identifiers
https://hdl.handle.net/10344/5034
 https://doi.org/10.34961/4167
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Funding Information
Science Foundation Ireland (SFI)
Sustainable Development Goals
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