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Modelling of resolution enhancement processes in lithography
conference contribution
posted on 2011-07-22, 11:54 authored by Arousian Arshak, Khalil Arshak, Declan McDonagh, B.P. MathurThis paper describes the modelling and simulation of
two resolution enhancement techniques in lithography ; 1) phase
shift mask (PSM) technology and 2) top surface imaging (TSI)
with silylation and dry development. The effect of the duty ratio
on the image contrast is computed. Simulated one and two
dimensional rim shifters and attenuated PSMs are presented.
The effect of the aerial image on the silylation profile for the top
imaging processes, DESIRE and PRIME, is also presented. The
effect of the first etch step on the final resist profiles is
examined. The partial pressure and the presence of magnetic
fields are also presented.
History
Publication
MIEL- 20th International Conference on MicroelectronicsPublisher
IEEE Computer SocietyNote
peer-reviewedRights
©1995 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.Language
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